Orientation of PbTiO3 Thin Films Prerared by Sputter-Assisted Plasma CVD.

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrical Properties of Plasma-assisted Cvd Deposited Thin Silicon Oxynitride Films

The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growin...

متن کامل

Plasma CVD of hydrogenated boron-carbon thin films from triethylboron.

Low-temperature chemical vapor deposition (CVD) of B-C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B-C films. Herein, we demonstrate plasma CVD of B-C thin films using triethylboron (TEB) as a single sour...

متن کامل

Physical Properties of Reactively Sputter-Deposited C-N Thin Films

This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...

متن کامل

Photoactive Thin Silver Films by Atmospheric Pressure CVD

We report the visible and UV activity of thin silver films. The films are grown using a CVD process employing aqueous-based silver precursors, flame-assisted chemical vapour deposition. This approach overcomes many of the previously encountered limitations to silver deposition by employing an atmospheric pressure process, low-cost and low-toxicity precursors. The resultant films are assessed fo...

متن کامل

Copper and Copper Oxide Thin Films Obtained by Metalorganic Microwave Plasma Cvd

Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) is an innovative technique allowing the direct preparation, at low temperature, of different valence states of copper (Cu°, Cu, Cu). The precursor used is a volatile metalorganic one (copper acetylacetonate) with helium as a carrier gas. The precursor is then transported in a remote plasma of Ar, A1/O2 or A r / ^ O gas at low pressure...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: SHINKU

سال: 1993

ISSN: 0559-8516,1880-9413

DOI: 10.3131/jvsj.36.387